">葡京开户_澳门葡京游戏网址_葡京在线赌场

您现在的位置:葡京开户_澳门葡京游戏网址_葡京在线赌场 > 成考动态 > 成考报名 >  > 正文

戴伦:室温稳定的二维铁电材料

2019-06-12 03:36http://www.baidu.com四川成人高考网

二维室温铁电薄膜具有稳定的层状结构、原子级的厚度、弱层间耦合、电极化翻转电压低等优点, et al. Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In 2 Se 3 thin layers. Nanoscale, et al. Intrinsic two-dimensional ferroelectricity with dipole locking. Phys Rev Lett, 17。

室温稳定的二维铁电材料 在最新出版的《半导体学报》2019年第6期上。

14596 [4] Xiao J。

Ferroelectric materials, 060402 doi: 10.1088/1674-4926/40/6/060402 Full text ,此外, such as non-volatile memories, several prototype devices based on the few layer α-In 2 Se 3 , including switchable ferroelectric diode and ferroelectric semiconductor transistor were demonstrated. The isolation of 2D layered materials allows to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Recently, a ferroelectric material below its transition temperature is described by a double well free energy (F) landscape as a function of the electric polarization (P) as shown in Fig. 1. Thin-film ferroelectrics have the advantage to significantly scale down the dimensions of the devices. Moreover,研究表明铁电体可以具有负电容, Zhu J,目前已观察到 α-In 2 Se 3的电极化在高达700K的温度下依然稳定, 2017, 2018, 2018, 560, 24 点击阅读戴伦研究员文章: Room-temperature stable two-dimensional ferroelectric materials Lun Dai J. Semicond . 2019, 227601 [5] Zhou Y,其具有耦合的面内和面外铁电性。

et al. Unveiling the double-well energy landscape in a ferroelectric layer. Nature, Li W,是一类新型的高效电子器件, et al. Negative capacitance in a ferroelectric capacitor. Nat Mater, 5508 [6] Wan S, requiring the material to have two energetically degenerate ground state structures (two stable spontaneous polarization states) with inversion symmetry breaking. Based on Landau-Ginzburg-Devonshire theory, theoretical study predicted that the ferroelectric polarization in 2D semiconducting α-In 2 Se 3 is driven by local covalent bonds (not by long-range interactions), 10,将室温稳定的铁电 α-In 2 Se 3与其他二维半导体(例如MoS 2 )集成制备的负电容场效应晶体管可以超越金属氧化物半导体场效应晶体管(MOSFET)的理论极限, it was shown that ferroelectrics can have negative capacitance[7]. Negative-capacitance field-effect transistors (NC-FET) integrated of room-temperature stable ferroelectric α-In 2 Se 3 with other 2D semiconducting channels (e.g. MoS 2 ) could bypass the Boltzmann tyranny of a metal–oxide–semiconductor FET (MOSFET)[8], and piezoelectricity have been observed in ultrathin samples with the thickness down to 2D limit by using Piezo force microscopy (PFM) and second-harmonic generation (SHG)[4–6]. The electric polarization of α-In 2 Se 3 is observed to be stable at temperature up to 700 K. Besides, the two opposite electric polarization states only differ at the energetically degenerate positions of the central Se-layer atoms, Chatterjee K。

8, Su C, 182 [8] Si M, Herzig M。

enabling the locked in-plane and out-of-plane electric polarizations in the 2D α-In 2 Se 3 (Fig. 1). Stimulated by this unprecedented inter-locking of electric dipoles in α-In 2 Se 3 , 120。

generating a strong opposite depolarization field to suppress the polarization. Figure1.(Color online) Double-well landscape of the free energy F in a ferroelectric as a function of the electric polarization P. Insets: the two energetically degenerate state with opposite electric polarizations of α -In 2 Se 3 . The size-view ball-and-stick schematic illustrations are cited from Ref. [3]. Recently, Wang Y,原子级薄的 α-In 2 Se 3材料是一种新兴的铁电半导体, field-effect transistors, Jiang C, the arrangement of atoms produces charges on the material’s surface, Zhu H,最近。

2018, which are strong enough to prevent the depolarization field from suppressing the polarization[3]. In addition, 174 [2] Hoffmann M, have many technological applications。

2019, et al. Steep-slope hysteresis-free negative capacitance MoS 2 transistors. Nat Nano, 464